New Compact SiC FET Maximizes Efficiency in High Voltage Automotive Applications

Published  January 25, 2024   0
L Lakshita
Author
UJ4SC075009B7S SiC FET

Qorvo has unveiled an automotive-qualified silicon carbide (SiC) field effect transistor (FET) UJ4SC075009B7S that offers 9mΩ RDS(on) in a compact D2PAK-7L package. This 750V SiC FET is the first in a new family of pin-compatible SiC FETs from Qorvo with RDS(on) options up to 60mΩ, making them well suited for electric vehicle (EV) applications, including on-board chargers, DC/DC converters and positive temperature coefficient (PTC) heater modules.

The UJ4SC075009B7S FET features a 9mΩ typical RDS(on) at 25°C needed for reducing conduction losses and maximizing efficiency in high voltage, multi-kilowatt automotive applications. Its small, surface-mount package enables automated assembly flows and reduces customer manufacturing costs. This new 750V family complements Qorvo’s existing 1200V and 1700V automotive SiC FETs in D2PAK packaging to form a complete portfolio addressing EV applications that span 400V and 800V battery architectures.

Key Features

  • Threshold voltage VG(th): 4.5V (typical) allowing 0 to 15V drive

  • Low body diode VFSD: 1.1V

  • Maximum operating temperature: 175°C

  • Excellent reverse recovery: Qrr = 338 nC

  • Low gate charge: QG = 75 nC

  • Automotive Electronics Council (AEC) Q101-qualified